INVESTIGATION OF DIELECTRIC AND OPTICAL PROPERTIES OF MGO THIN FILMS
The performance of silicon carbide (SiC) devices is limited to the breakdown of the widely used insulator (SiO2) between the layers of these devices. Therefore, magnesium oxide (MgO) with its relatively higher permittivity was suggested to replace SiO2. MgO was prepared in thin films using spray pyrolysis technique and then its structure was investigated by x-ray diffraction (XRD). The dielectric properties were investigated in the frequency range (42 - 106 Hz) for films deposited at different substrate temperatures. It was found that as the deposition temperature increases, the permittivity gradually increases from about 5 to about 17, indicating enhancements in their dielectric properties.
The transmission, reflection, extinction coefficient and refractive index of MgO thin films deposited at different substrate temperatures were also investigated in the wavelength range (290 – 2500 nm). Both transmission and reflection of these films showed an increase with the increase of substrate temperature. The permittivity and dielectric loss calculated from these optical parameters led to improvements of their properties for films deposited at high substrate temperature
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